JPH0241838B2 - - Google Patents

Info

Publication number
JPH0241838B2
JPH0241838B2 JP57150844A JP15084482A JPH0241838B2 JP H0241838 B2 JPH0241838 B2 JP H0241838B2 JP 57150844 A JP57150844 A JP 57150844A JP 15084482 A JP15084482 A JP 15084482A JP H0241838 B2 JPH0241838 B2 JP H0241838B2
Authority
JP
Japan
Prior art keywords
voltage
level
selection signal
data retention
chip selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57150844A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5940393A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57150844A priority Critical patent/JPS5940393A/ja
Priority to EP83108582A priority patent/EP0102618B1/en
Priority to DE8383108582T priority patent/DE3381632D1/de
Priority to US06/528,006 priority patent/US4631707A/en
Publication of JPS5940393A publication Critical patent/JPS5940393A/ja
Publication of JPH0241838B2 publication Critical patent/JPH0241838B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16557—Logic probes, i.e. circuits indicating logic state (high, low, O)
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
JP57150844A 1982-08-31 1982-08-31 メモリ回路 Granted JPS5940393A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57150844A JPS5940393A (ja) 1982-08-31 1982-08-31 メモリ回路
EP83108582A EP0102618B1 (en) 1982-08-31 1983-08-31 Memory circuit with power supply voltage detection means
DE8383108582T DE3381632D1 (de) 1982-08-31 1983-08-31 Speicherschaltung mit mitteln zum nachweis der speisespannung.
US06/528,006 US4631707A (en) 1982-08-31 1983-08-31 Memory circuit with power supply voltage detection means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150844A JPS5940393A (ja) 1982-08-31 1982-08-31 メモリ回路

Publications (2)

Publication Number Publication Date
JPS5940393A JPS5940393A (ja) 1984-03-06
JPH0241838B2 true JPH0241838B2 (en]) 1990-09-19

Family

ID=15505609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150844A Granted JPS5940393A (ja) 1982-08-31 1982-08-31 メモリ回路

Country Status (4)

Country Link
US (1) US4631707A (en])
EP (1) EP0102618B1 (en])
JP (1) JPS5940393A (en])
DE (1) DE3381632D1 (en])

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
GB8611794D0 (en) * 1986-05-14 1986-06-25 Gen Electric Co Plc Microprocessor back-up system
US5001670A (en) * 1987-02-06 1991-03-19 Tektronix, Inc. Nonvolatile memory protection
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
JPS6444618A (en) * 1987-08-13 1989-02-17 Toshiba Corp Reset signal generating circuit
US4800532A (en) * 1987-11-25 1989-01-24 Siemens Aktiengesellschaft Circuit arrangement with a processor and at least two read-write memories
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
JP2614514B2 (ja) * 1989-05-19 1997-05-28 三菱電機株式会社 ダイナミック・ランダム・アクセス・メモリ
DE69120483T2 (de) * 1990-08-17 1996-11-14 Sgs Thomson Microelectronics Halbleiter-Speicher mit unterdrücktem Testmodus-Eingang während des Strom-Einschaltens
US5121358A (en) * 1990-09-26 1992-06-09 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with power-on reset controlled latched row line repeaters
US5124951A (en) * 1990-09-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with sequenced latched row line repeaters
US5424986A (en) * 1991-12-19 1995-06-13 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with power-on reset control of disabled rows
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
US6016560A (en) 1995-06-14 2000-01-18 Hitachi, Ltd. Semiconductor memory, memory device, and memory card
US5884084A (en) * 1996-10-31 1999-03-16 Intel Corporation Circuit and method for using early reset to prevent CMOS corruption with advanced power supplies
US5940345A (en) * 1997-12-12 1999-08-17 Cypress Semiconductor Corp. Combinational logic feedback circuit to ensure correct power-on-reset of a four-bit synchronous shift register
JP4549711B2 (ja) * 2004-03-29 2010-09-22 ルネサスエレクトロニクス株式会社 半導体回路装置
KR101707266B1 (ko) * 2013-08-29 2017-02-15 엘에스산전 주식회사 Plc에서의 os의 업데이트 장치 및 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713072B2 (en]) * 1975-02-10 1982-03-15
JPS53120548A (en) * 1977-03-30 1978-10-21 Toshiba Corp Battery life display system
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US4288865A (en) * 1980-02-06 1981-09-08 Mostek Corporation Low-power battery backup circuit for semiconductor memory
JPS56122132U (en]) * 1980-02-18 1981-09-17

Also Published As

Publication number Publication date
EP0102618A2 (en) 1984-03-14
US4631707A (en) 1986-12-23
JPS5940393A (ja) 1984-03-06
DE3381632D1 (de) 1990-07-12
EP0102618A3 (en) 1987-07-29
EP0102618B1 (en) 1990-06-06

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